07282404 is referenced by 6 patents and cites 20 patents.

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by deposition and patterning of the MIM capacitor films. Specifically, the method includes providing a substrate including a wiring level, the wiring level comprising at least one conductive interconnect formed in a dielectric layer; selectively removing a portion of the dielectric layer to recess the dielectric layer below an upper surface of the at least one conductive interconnect; forming a dielectric stack upon the at least one conductive interconnect and the recessed dielectric layer; and forming a metal-insulator-metal (MIM) capacitor on the dielectric stack. The MIM capacitor includes a bottom plate electrode, a dielectric and a top plate electrode. The bottom and top plate electrodes can comprise the same or different conductive metal.

Title
Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme
Application Number
10/709829
Publication Number
7282404 (B2)
Application Date
June 1, 2004
Publication Date
October 16, 2007
Inventor
Vidhya Ramachandran
Ossining
NY, US
William J Murphy
North Ferrisburgh
VT, US
Zhong Xiang He
Essex Junction
VT, US
Ebenezer E Eshun
Essex Junction
VT, US
Douglas D Coolbaugh
Essex Junction
VT, US
Agent
Anthony J Canale
Scully Scott Murphy & Presser P C
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/8242
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