07247887 is referenced by 314 patents and cites 18 patents.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

Title
Segmented channel MOS transistor
Application Number
11/173237
Publication Number
7247887 (B2)
Application Date
July 1, 2005
Publication Date
July 24, 2007
Inventor
Victor Moroz
Saratoga
CA, US
Tsu Jae King
Fremont
CA, US
Agent
Jeanette S Harms
Bever Hoffman & Harms
Assignee
Synopsys
CA, US
IPC
H01L 29/43
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