07223517 is referenced by 7 patents and cites 31 patents.

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.

Title
Lithographic antireflective hardmask compositions and uses thereof
Application Number
10/634667
Publication Number
7223517 (B2)
Application Date
August 5, 2003
Publication Date
May 29, 2007
Inventor
Dirk Pfeiffer
Dobbs Ferry
NY, US
David R Medeiros
Ossining
NY, US
Arpan P Mahorowala
Bronxville
NY, US
Katherina Babich
Chappaqua
NY, US
Agent
Daniel P Morris Esq
Ryan Mason & Lewis
Assignee
International Business Machines Corporation
NY, US
IPC
G03C 7/004
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