07220983 is referenced by 201 patents and cites 107 patents.

The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention are described in the claims, specification and drawings.

Title
Self-aligned small contact phase-change memory method and device
Application Number
11/9365
Publication Number
7220983 (B2)
Application Date
December 9, 2004
Publication Date
May 22, 2007
Inventor
Hsiang Lan Lung
Elmsford
NY, US
Agent
Haynes Beffel & Wolfeld
Ernest J Beffel Jr
Assignee
Macronix International
TW
IPC
H01L 47/00
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