07211144 is referenced by 79 patents and cites 411 patents.

A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Title
Pulsed nucleation deposition of tungsten layers
Application Number
10/194629
Publication Number
7211144 (B2)
Application Date
July 12, 2002
Publication Date
May 1, 2007
Inventor
Ming Xi
Milpitas
CA, US
Robert L Jackson
San Jose
CA, US
Alfred W Mak
Union City
CA, US
Ken Kaung Lai
Milpitas
CA, US
Jong Hyun Yoo
Milpitas
CA, US
Ping Jian
San Jose
CA, US
Xinliang Lu
Sunnyvale
CA, US
Agent
Patterson & Sheridan
Assignee
Applied Materials
CA, US
IPC
C30B 25/16
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