07208354 is referenced by 80 patents and cites 26 patents.

Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy (SPE) processes. The melt processes preferably also cause diffusion of germanium to dilute the overall germanium content and essentially consume the silicon overlying the insulator. The SPE process can be conducted with or without diffusion of germanium into the underlying silicon, and so is applicable to SOI as well as conventional semiconductor substrates.

Title
Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates
Application Number
10/897985
Publication Number
7208354 (B2)
Application Date
July 23, 2004
Publication Date
April 24, 2007
Inventor
Matthias Bauer
Phoenix
AZ, US
Agent
Knobbe Martens Olson & Bear
Assignee
ASM America
AZ, US
IPC
H01L 21/00
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