07199050 is referenced by 65 patents and cites 11 patents.

A method for forming vias which pass through a semiconductor wafer substrate assembly such as a semiconductor die or wafer allows two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer. An inventive structure resulting from the method is also described.

Title
Pass through via technology for use during the manufacture of a semiconductor device
Application Number
10/925796
Publication Number
7199050 (B2)
Application Date
August 24, 2004
Publication Date
April 3, 2007
Inventor
William M Hiatt
Eagle
ID, US
Agent
Kevin D Martin
Assignee
Micron Technology
ID, US
IPC
H01L 21/44
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