07192892 is referenced by 138 patents and cites 237 patents.

An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.

Title
Atomic layer deposited dielectric layers
Application Number
10/379470
Publication Number
7192892 (B2)
Application Date
March 4, 2003
Publication Date
March 20, 2007
Inventor
Leonard Forbes
Corvallis
OR, US
Kie Y Ahn
Chappaqua
NY, US
Agent
Schwegman Lundberg Woessner & Kluth P A
Assignee
Micron Technology
ID, US
IPC
H01L 21/469
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