07192824 is referenced by 146 patents and cites 228 patents.

Dielectric layers containing an atomic layer deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Forming a layer of hafnium oxide by atomic layer deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lanthanide, provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.

Title
Lanthanide oxide / hafnium oxide dielectric layers
Application Number
10/602323
Publication Number
7192824 (B2)
Application Date
June 24, 2003
Publication Date
March 20, 2007
Inventor
Leonard Forbes
Corvallis
OR, US
Kie Y Ahn
Chappaqua
NY, US
Agent
Schwegman Lundberg Woessner & Kluth P A
Assignee
Micron Technology
ID, US
IPC
H01L 21/8238
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