07192626 is referenced by 52 patents and cites 14 patents.

Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

Title
Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition
Application Number
10/669623
Publication Number
7192626 (B2)
Application Date
September 24, 2003
Publication Date
March 20, 2007
Inventor
Yuusuke Sato
Tokyo
JP
Naoki Tamaoki
Tokyo
JP
Takako Kimura
Ibaraki
JP
Jean Marc Girard
Paris
FR
Christian Dussarrat
Ibaraki
JP
Agent
Christopher J Cronin
Linda K Russell
Assignee
L Air Liquide Société Anonyme á Directoire et Conseil de Surveillance pour l Etude et l Exploitation des Procédés Georges Claude
FR
IPC
C23C 16/34
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