07187585 is referenced by 192 patents and cites 33 patents.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

Title
Read operation for non-volatile storage that includes compensation for coupling
Application Number
11/99049
Publication Number
7187585 (B2)
Application Date
April 5, 2005
Publication Date
March 6, 2007
Inventor
Jian Chen
San Jose
CA, US
Yan Li
Milpitas
CA, US
Agent
Vierra Magen Marcus & DeNiro
Assignee
Sandisk Corporation
CA, US
IPC
G11C 7/00
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