07183610 is referenced by 70 patents and cites 18 patents.

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

Title
Super trench MOSFET including buried source electrode and method of fabricating the same
Application Number
10/836833
Publication Number
7183610 (B2)
Application Date
April 30, 2004
Publication Date
February 27, 2007
Inventor
Sharon Shi
San Jose
CA, US
Kuo In Chen
Los Altos
CA, US
Kam Hong Lui
Santa Clara
CA, US
Robert Xu
Fremont
CA, US
Christiana Yue
Milpitas
CA, US
Kyle Terrill
Santa Clara
CA, US
Yuming Bai
Union City
CA, US
Deva N Pattanayak
Saratoga
CA, US
Agent
Silicon Valley Patent Group
Assignee
Siliconix incorporated
CA, US
IPC
H01L 29/76
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