07164147 is referenced by 127 patents and cites 16 patents.

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion includes a chalcogenide material layer which undergoes a phase change due to heating of the heating portion to store data therein. The heating material layer is disposed under the chalcogenide material layer, and the top surface of the heating material layer is oxidized using a plasma oxidation process to increase a resistance value. Accordingly, the heat capacity necessary for the chalcogenide material layer can be transmitted using a small amount of current, and current used in the semiconductor memory device can be further reduced.

Title
Semiconductor memory device and method of fabricating the same
Application Number
10/839261
Publication Number
7164147 (B2)
Application Date
May 6, 2004
Publication Date
January 16, 2007
Inventor
Won tae Lee
Gyeonggi-do
KR
Young soo Park
Suwon-si
KR
Jung hyun Lee
Suwon-si
KR
Agent
Lee & Morse P C
Assignee
Samsung Electronics
KR
IPC
H01L 29/02
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