07148155 is referenced by 255 patents and cites 43 patents.

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

Title
Sequential deposition/anneal film densification method
Application Number
10/975028
Publication Number
7148155 (B1)
Application Date
October 26, 2004
Publication Date
December 12, 2006
Inventor
Bunsen Nie
Fremont
CA, US
Adrianne K Tipton
Pleasanton
CA, US
Jeff Tobin
Mountain View
CA, US
Dennis M Hausmann
Los Gatos
CA, US
Ron Rulkens
Milpitas
CA, US
George D Papasouliotis
Sunnyvale
CA, US
Raihan M Tarafdar
San Jose
CA, US
Agent
Beyer Weaver & Thomas
Assignee
Novellus Systems
CA, US
IPC
H01L 21/469
H01L 21/31
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