07141853 is referenced by 187 patents and cites 34 patents.

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

Title
Method and structure for buried circuits and devices
Application Number
10/832894
Publication Number
7141853 (B2)
Application Date
April 27, 2004
Publication Date
November 28, 2006
Inventor
Kris V Srikrishnan
Wappingers Falls
NY, US
William T Devine
Ulster Park
NY, US
John E Campbell
Wappingers Falls
NY, US
Agent
Ira D Blecker
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 27/01
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