07141820 is referenced by 7 patents and cites 117 patents.

A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer and/or (ii) having an average height less than 10 nm.

Title
Structures with planar strained layers
Application Number
10/788741
Publication Number
7141820 (B2)
Application Date
February 27, 2004
Publication Date
November 28, 2006
Inventor
Eugene A Fitzgerald
Windham
NH, US
Christopher W Leitz
Manchester
NH, US
Minjoo L Lee
Cambridge
MA, US
Agent
Goodwin Procter
Assignee
AmberWave Systems Corporation
NH, US
IPC
H01L 29/04
View Original Source