07122464 is referenced by 139 patents and cites 57 patents.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.

Title
Systems and methods of forming refractory metal nitride layers using disilazanes
Application Number
10/929823
Publication Number
7122464 (B2)
Application Date
August 30, 2004
Publication Date
October 17, 2006
Inventor
Brian A Vaartstra
Nampa
ID, US
Agent
Mueting Raasch & Gebhardt P A
Assignee
Micron Technology
ID, US
IPC
H01L 21/4763
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