07108771 is referenced by 11 patents and cites 30 patents.

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

Title
Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
Application Number
10/15326
Publication Number
7108771 (B2)
Application Date
December 13, 2001
Publication Date
September 19, 2006
Inventor
Ravi K Laxman
San Jose
CA, US
Scott Battle
Cedar Park
TX, US
James T Y Lin
Austin
TX, US
Ziyun Wang
New Milford
CT, US
Alexander S Borovik
Hartford
CT, US
Thomas H Baum
New Fairfield
CT, US
Chongying Xu
New Milford
CT, US
Agent
Margaret Chappuis
Intellectual Property Technology Law
Steven J Hultquist
Assignee
Advanced Technology Materials
CT, US
IPC
C02F 7/20
C02F 7/08
C07C 51/44
B01D 15/00
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