07099194 is referenced by 114 patents and cites 22 patents.

An error recovery technique is used on marginal nonvolatile memory cells. A marginal memory cell is unreadable because it has a voltage threshold (VT) of less than zero volts. By biasing adjacent memory cells, this will shift the voltage threshold of the marginal memory cells, so that it is a positive value. Then the VT of the marginal memory cell can be determined. The technique is applicable to both binary and multistate memory cells.

Title
Error recovery for nonvolatile memory
Application Number
11/3545
Publication Number
7099194 (B2)
Application Date
December 3, 2004
Publication Date
August 29, 2006
Inventor
Jian Chen
San Jose
CA, US
Loc Tu
San Jose
CA, US
Agent
Parsons Hsue & de Runtz
Assignee
SanDisk Corporation
CA, US
IPC
G11C 16/04
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