07092284 is referenced by 46 patents and cites 6 patents.

A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.

Title
MRAM with magnetic via for storage of information and field sensor
Application Number
10/922434
Publication Number
7092284 (B2)
Application Date
August 20, 2004
Publication Date
August 15, 2006
Inventor
Ulrich Klostermann
Fontainebleau
FR
Rainer Leuschner
Samoreau
FR
Daniel Braun
Paris
FR
Agent
Dicke Billig & Czaja PLLC
Assignee
Altis Semiconductor
FR
Infineon Technologies
DE
IPC
G11C 11/14
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