07084076 is referenced by 127 patents and cites 26 patents.

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

Title
Method for forming silicon dioxide film using siloxane
Application Number
10/782094
Publication Number
7084076 (B2)
Application Date
February 19, 2004
Publication Date
August 1, 2006
Inventor
Jong ho Yang
Seoul
KR
Joo won Lee
Suwon
KR
Kang soo Chu
Suwon
KR
Jae eun Park
Yongin
KR
Agent
Mills & Onello
Assignee
Samsung Electronics
KR
IPC
H01L 21/31
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