07078296 is referenced by 49 patents and cites 371 patents.

Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOSFET is provided by making the sidewall of the overlying isolation dielectric layer substantially aligned with the sidewall of the gate conductor. Such an alignment can be made through any number of methods such as using a dual dielectric process, using a selective dielectric oxidation process, using a selective dielectric deposition process, or a spin-on-glass dielectric process.

Title
Self-aligned trench MOSFETs and methods for making the same
Application Number
10/52234
Publication Number
7078296 (B2)
Application Date
January 16, 2002
Publication Date
July 18, 2006
Inventor
James Murphy
South Jordan
UT, US
Robert Herrick
Lehi
UT, US
Dean Probst
West Jordan
UT, US
Bruce Marchant
Murray
UT, US
Becky Losee
Cedar Hills
UT, US
Duc Chau
San Jose
CA, US
Agent
Kirton & McConkie
Kenneth E Horton
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 21/8232
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