07077903 is referenced by 4 patents and cites 10 patents.

Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA layer (used as an ARC and/or hardmask) with etch selectivity to the patterned photoresist, and etching to pattern transfer through a dielectric layer of nitride. This is accomplished by oxidizing a TERA layer after etching pattern transfer through the TERA layer to form an oxidized TERA layer having chemical properties similar to oxide. The methods provide all of the advantages of the TERA material and allows for high etch selectivity (approximately 5–10:1) for etching to pattern transfer through nitride. In addition, the methodology reduces LER and allows for trimming despite reduced photoresist thickness.

Title
Etch selectivity enhancement for tunable etch resistant anti-reflective layer
Application Number
10/705577
Publication Number
7077903 (B2)
Application Date
November 10, 2003
Publication Date
July 18, 2006
Inventor
Hongwen Yan
Somers
NY, US
Dirk Pfeiffer
Dobbs Ferry
NY, US
Wesley C Natzle
New Paltz
NY, US
Arpan P Mahorowala
Bronxville
NY, US
David V Horak
Essex Junction
VT, US
Scott D Halle
Hopewell Junction
NY, US
Katherina E Babich
Chappaqua
NY, US
Agent
Hoffman Warnick & D Alessandro
Yuanmin Cai Esq
Assignee
International Business Machines Corporation
NY, US
IPC
C30B 25/02
View Original Source