07061014 is referenced by 2805 patents and cites 11 patents.

Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Title
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
Application Number
10/494247
Publication Number
7061014 (B2)
Application Date
October 31, 2002
Publication Date
June 13, 2006
Inventor
Toshio Kamiya
Kanagawa
JP
Masahiro Hirano
Tokyo
JP
Kazushige Ueda
Kanagawa
JP
Masahiro Orita
Chiba
JP
Hiromichi Ota
Kanagawa
JP
Hideo Hosono
Kanagawa
JP
Agent
Weterman Hattori Daniels & Adrian
Assignee
Japan Science and Technology Agency
JP
IPC
H01L 29/12
H01L 29/10
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