07056821 is referenced by 2 patents and cites 2 patents.

A method for manufacturing a dual damascene structure, which forms a trench first, is described. The manufacturing method has following steps. First, a substrate with a plurality of semiconductor devices is provided. A first metal layer, a first etching stop layer, a dielectric layer, and a second etching stop layer are subsequently formed thereon. A trench is formed in the dielectric layer at a predetermined depth thereafter, and a sacrificial layer is filled therein and is next planarized. Then a photoresist layer is formed thereon for etching a via. Afterward the photoresist layer and the sacrificial layer are both removed. Following that, the first etching stop layer is etched through to expose the first metal layer. Finally, the via and the trench are filled with a second metal layer.

Title
Method for manufacturing dual damascene structure with a trench formed first
Application Number
10/919328
Publication Number
7056821 (B2)
Application Date
August 17, 2004
Publication Date
June 6, 2006
Inventor
Chia Hung Lai
Hsinchu
TW
Yu Hua Lee
Hsinchu
TW
Juan Jann Jou
Tainan Hsien
TW
Chin Tien Yang
Hsinchu
TW
Agent
Hoffman Wasson & Gitler
Assignee
Taiwan Semiconductor Manufacturing
TW
IPC
H01L 21/44
H01L 21/4763
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