07053413 is referenced by 188 patents and cites 13 patents.

A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

Title
Homoepitaxial gallium-nitride-based light emitting device and method for producing
Application Number
10/831865
Publication Number
7053413 (B2)
Application Date
April 26, 2004
Publication Date
May 30, 2006
Inventor
An Ping Zhang
Niskaryuna
NY, US
Xian An Cao
Clifton Park
NY, US
Steven Francis LeBoeuf
Schenectady
NY, US
Nicole Andrea Evers
Niskayuna
NY, US
Mark Philip D Evelyn
Niskayuna
NY, US
Agent
Christian G Cabou
William E Powell III
Assignee
General Electric Company
NY, US
IPC
H01L 27/15
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