07049190 is referenced by 2645 patents and cites 7 patents.

A ZnO buffer layer having an electric conductivity of 1×10−9 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer layer. The ZnO semiconductor layer is formed under the condition that the flow rate ratio of an oxygen gas in a sputtering gas is lower than that in the formation of the ZnO buffer layer.

Title
Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
Application Number
10/390563
Publication Number
7049190 (B2)
Application Date
March 17, 2003
Publication Date
May 23, 2006
Inventor
Masao Isomura
Hiratsuka
JP
Katsutoshi Takeda
Katano
JP
Agent
Darby & Darby
Assignee
Sanyo Electric
JP
IPC
H01L 21/8238
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