07005668 cites 7 patents.

A method of forming a MOSFET device is provided. The method includes providing a substrate. The method includes forming on the substrate a relaxed SiGe layer having a Ge content between 0.51 and 0.80. Furthermore, the method includes depositing on the relaxed SiGe layer a ε-Si layer.

Title
Method for improving hole mobility enhancement in strained silicon p-type MOSFETS
Application Number
10/603712
Publication Number
7005668 (B2)
Application Date
June 25, 2003
Publication Date
February 28, 2006
Inventor
Eugene A Fitzgerald
Windham
NH, US
Minjoo L Lee
Cambridge
MA, US
Agent
Gauthier & Connors
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 29/06
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