07005665 is referenced by 32 patents and cites 15 patents.

The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.

Title
Phase change memory cell on silicon-on insulator substrate
Application Number
10/708667
Publication Number
7005665 (B2)
Application Date
March 18, 2004
Publication Date
February 28, 2006
Inventor
Hon Sum P Wong
Chappaqua
NY, US
Chung H Lam
Williston
VT, US
Jeffrey B Johnson
Essex Junction
VT, US
Hendrick Hamann
Yorktown Heights
NY, US
Stephen S Furkay
South Burlington
VT, US
Agent
Anthony Canale
Scully Scott Murphy & Presser
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/00
H01L 47/00
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