07001848 is referenced by 8 patents and cites 11 patents.

Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer 226 of FIG. 2a) on the first conductor (conductor 222 of FIG. 2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer 234 of FIG. 2d) on the dielectric layer, the oxygen-sensitive material substantially filling the opening in the dielectric layer and for providing an electrical contact to the first conductor; forming a photoresist layer on the oxygen-sensitive material, the photoresist layer having a pattern so as to expose portions of the oxygen-sensitive material; removing the exposed portions of the oxygen-sensitive material on the dielectric material, the removal step causing a residue to be formed on exposed surfaces of the remaining portions of the oxygen-sensitive material; and removing the photoresist layer by subjecting the photoresist layer with a hydrogen-containing gas incorporated into a plasma.

Title
Hydrogen plasma photoresist strip and polymeric residue cleanup process for oxygen-sensitive materials
Application Number
9/199829
Publication Number
7001848 (B1)
Application Date
November 25, 1998
Publication Date
February 21, 2006
Inventor
Stephen W Russell
Dallas
TX, US
David B Aldrich
Allen
TX, US
Patricia B Smith
Grapevine
TX, US
Agent
Frederick J Telecky Jr
W James Brady III
Peter K McLarty
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01L 21/302
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