06977194 is referenced by 159 patents and cites 1 patents.

In producing complementary sets of metal-oxide-semiconductor (CMOS) field effect transistors, including nFET and pFET), carrier mobility is enhanced or otherwise regulated through the reacting the material of the gate electrode with a metal to produce a stressed alloy (preferably CoSi2, NiSi, or PdSi) within a transistor gate. In the case of both the nFET and pFET, the inherent stress of the respective alloy results in an opposite stress on the channel of respective transistor. By maintaining opposite stresses in the nFET and pFET alloys or silicides, both types of transistors on a single chip or substrate can achieve an enhanced carrier mobility, thereby improving the performance of CMOS devices and integrated circuits.

Title
Structure and method to improve channel mobility by gate electrode stress modification
Application Number
10/695752
Publication Number
6977194 (B2)
Application Date
October 30, 2003
Publication Date
December 20, 2005
Inventor
Oleg Gluschenkov
Poughkeepsie
NY, US
Bruce B Doris
Brewster
NY, US
Omer H Dokumaci
Wappingers Falls
NY, US
Dureseti Chidambarrao
Weston
CT, US
Michael P Belyansky
Bethel
CT, US
Agent
Ira D Blecker
Whitham Curtis & Christofferson P C
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 029/72
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