06962838 is referenced by 4 patents and cites 9 patents.

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been increased. The hole mobility is increased by applying physical straining to the silicon islands. By straining the silicon islands, the hole mobility is increased resulting in increased device gain. This is accomplished without requiring an increase in the size of the devices, or the size of the contacts to the devices.

Title
High mobility transistors in SOI and method for forming
Application Number
10/447579
Publication Number
6962838 (B2)
Application Date
May 29, 2003
Publication Date
November 8, 2005
Inventor
Jed H Rankin
South Burlington
VT, US
Edward J Nowak
Essex Junction
VT, US
Randy W Mann
Jericho
VT, US
Xavier Baie
Somers
NY, US
Brent A Anderson
Jericho
VT, US
Agent
William D Sabo
Schmeiser Olson & Watts
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 021/00
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