06958938 is referenced by 65 patents and cites 21 patents.

A data writing method for a semiconductor memory device includes writing data into the first memory cell, rewriting the data into the first memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one first reference threshold voltage, writing data into the second memory cell following writing the data into the first memory cell, and rewriting the data into the first memory cell following writing the data into the second memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one second reference threshold voltage. The first reference threshold voltage is set to be different from the second reference threshold voltage.

Title
Data writing method for semiconductor memory device and semiconductor memory device
Application Number
11/7461
Publication Number
6958938 (B2)
Application Date
December 9, 2004
Publication Date
October 25, 2005
Inventor
Yuji Takeuchi
Yokohama
JP
Akira Goda
Yokohama
JP
Mitsuhiro Noguchi
Yokohama
JP
Agent
Oblon Spivak McCelland Maier & Neustadt P C
Assignee
Kabushiki Kaisha Toshiba
JP
IPC
G11C 016/04
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