06951804 is referenced by 64 patents and cites 371 patents.

A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers (305, 307) of tantalum and nitrogen. The nitrogen precursor may be a plasma gas source. The resultant tantalum-nitride layer (204) may be used, for example, as a barrier layer. As barrier layers may be used with metal interconnect structures (206), at least one plasma anneal on the tantalum-nitride layer may be performed to reduce its resistivity and to improve film property.

Title
Formation of a tantalum-nitride layer
Application Number
9/776329
Publication Number
6951804 (B2)
Application Date
February 2, 2001
Publication Date
October 4, 2005
Inventor
Ming Xi
Milpitas
CA, US
Michael X Yang
Palo Alto
CA, US
Sean M Seutter
Fremont
CA, US
Agent
Moser Patterson & Sheridan
Assignee
Applied Materials
CA, US
IPC
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