06916745 is referenced by 63 patents and cites 283 patents.

In accordance with an embodiment of the present invention, a semiconductor device is formed as follows. An exposed surface area of a silicon layer where silicon can be removed is defined. A portion of the silicon layer is removed to form a middle section of a trench extending into the silicon layer from the exposed surface area of the silicon layer. Additional exposed surface areas of the silicon layer where silicon can be removed are defined. Additional portions of the silicon layer are removed to form outer sections of the trench such that the outer sections of the trench extend into the silicon layer from the additional exposed surface areas of the silicon layer. The middle section of the trench extends deeper into the silicon layer than the outer sections of the trench.

Title
Structure and method for forming a trench MOSFET having self-aligned features
Application Number
10/442670
Publication Number
6916745 (B2)
Application Date
May 20, 2003
Publication Date
July 12, 2005
Inventor
Dean Probst
West Jordan
UT, US
Becky Losee
Cedar Hills
UT, US
Robert Herrick
Lehi
UT, US
Agent
Townsend and Townsend and Crew
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 021/311
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