06916727 is referenced by 9 patents and cites 81 patents.

A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.

Title
Enhancement of P-type metal-oxide-semiconductor field effect transistors
Application Number
10/177571
Publication Number
6916727 (B2)
Application Date
June 21, 2002
Publication Date
July 12, 2005
Inventor
Eugene A Fitzgerald
Windham
NH, US
Minjoo L Lee
Cambridge
MA, US
Christopher W Leitz
Nashua
NH, US
Agent
Testa Hurwitz & Thibeault
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 021/20
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