06913965 is referenced by 2 patents and cites 7 patents.

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator layer is selectively formed to encapsulate at least a top plate of the MIM capacitor to protect the MIM capacitor from damage due to process steps such as, for example, reactive ion etching. By selective formation of the insulator layer on the MIM capacitor, openings in the inter-level dielectric layers are provided so that hydrogen and/or deuterium diffusion to the FETs can occur.

Title
Non-Continuous encapsulation layer for MIM capacitor
Application Number
10/709133
Publication Number
6913965 (B2)
Application Date
April 15, 2004
Publication Date
July 5, 2005
Inventor
Michael Zierak
Essex Junction
VT, US
Barbara A Waterhouse
Richmond
VT, US
Vidhya Ramachandran
Colchester
VT, US
Bradley Orner
Colchester
VT, US
Zhong Xiang He
Essex Junction
VT, US
Eric Adler
Jericho
VT, US
Wagdi W Abadeer
Jericho
VT, US
Agent
Anthony J Canale
Assignee
International Busniess Machines Corporation
NY, US
IPC
H01L 021/8242
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