06911358 is referenced by 33 patents and cites 93 patents.

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

Title
Method for manufacturing semiconductor device
Application Number
10/330019
Publication Number
6911358 (B2)
Application Date
December 27, 2002
Publication Date
June 28, 2005
Inventor
Shunpei Yamazaki
Setagaya
JP
Hiroshi Shibata
Higashine
JP
Atsuo Isobe
Atsugi
JP
Aiko Shiga
Atsugi
JP
Chiho Kokubo
Tochigi
JP
Munehiro Azami
Atsugi
JP
Agent
Robinson Intellectual Property Law Office P C
Eric J Robinson
Assignee
Semiconductor Energy Laboratory
JP
IPC
H01L 021/00
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