06909114 is referenced by 187 patents and cites 57 patents.

There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n−-type impurity regions are formed between a channel formation region and n+-type impurity regions. Some of the n−-type impurity regions overlap with a gate electrode, and the other n−-type impurity regions do not overlap with the gate electrode. Since the two kinds of n−-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

Semiconductor device having LDD regions
Application Number
Publication Number
6909114 (B1)
Application Date
November 4, 1999
Publication Date
June 21, 2005
Shunpei Yamazaki
Robinson Intellectual Property Law Office P C
Eric J Robinson
Semiconductor Energy Laboratory
H01L 031/113
H01L 031/062
H01L 029/94
H01L 029/04
H01L 029/76
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