06905547 is referenced by 36 patents and cites 28 patents.

An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.

Title
Method and apparatus for flexible atomic layer deposition
Application Number
10/175556
Publication Number
6905547 (B1)
Application Date
June 17, 2002
Publication Date
June 14, 2005
Inventor
Ed C Lee
Cupertino
CA, US
Lawrence D Matthysse
San Jose
CA, US
Thomas E Seidel
Sunnyvale
CA, US
Ana R Londergan
Campbell
CA, US
Agent
Blakley Sokoloff Taylor & Zafman
Assignee
Genus
CA, US
IPC
C23C 016/455
C23C 016/00
View Original Source