06890639 is referenced by 8 patents and cites 33 patents.

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

Title
Very low dielectric constant plasma-enhanced CVD films
Application Number
10/91699
Publication Number
6890639 (B2)
Application Date
March 4, 2002
Publication Date
May 10, 2005
Inventor
Robert P Mandal
Saratoga
CA, US
Agent
Moser Patterson & Sheridan
Assignee
Applied Materials
CA, US
IPC
H01L 021/302
B32B 003/26
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