06876028 is referenced by 15 patents and cites 9 patents.

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top surface of the interlevel dielectric layer; a conductive diffusion barrier in direct contact with the top surface of the bottom electrode; a MIM dielectric in direct contact with a top surface of the conductive diffusion barrier; and a top electrode in direct contact with a top surface of the MIM dielectric. The conductive diffusion barrier may be recessed into the copper bottom electrode or an additional recessed conductive diffusion barrier provided. Compatible resistor and alignment mark structures are also disclosed.

Title
Metal-insulator-metal capacitor and method of fabrication
Application Number
10/605444
Publication Number
6876028 (B1)
Application Date
September 30, 2003
Publication Date
April 5, 2005
Inventor
Vidhya Ramachandran
Ossining
NY, US
Zhong Xiang He
Essex Junction
VT, US
Jeffrey P Gambino
Westford
VT, US
Ebenezer E Eshun
Essex Junction
VT, US
Douglas D Coolbaugh
Essex Junction
VT, US
Agent
William D Sabo
Schmeiser Olsen & Watts
Assignee
International Business Machines Corporation
NY, US
IPC
H10L 031/119
H10L 029/94
H10L 029/76
H10L 027/108
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