06867152 is referenced by 40 patents and cites 8 patents.

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

Title
Properties of a silica thin film produced by a rapid vapor deposition (RVD) process
Application Number
10/672309
Publication Number
6867152 (B1)
Application Date
September 26, 2003
Publication Date
March 15, 2005
Inventor
Teresa Pong
Dublin
CA, US
Francisco J Juarez
Fremont
CA, US
Bunsen Nie
Fremont
CA, US
Patrick A Van Cleemput
Sunnyvale
CA, US
Adrianne K Tipton
Fremont
CA, US
Dennis M Hausmann
Los Gatos
CA, US
Agent
Beyer Weaver & Thomas
Assignee
Novellus Systems
CA, US
IPC
H01L 021/469
H01L 021/31
View Original Source