06859397 is referenced by 258 patents and cites 27 patents.

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.

Title
Source side self boosting technique for non-volatile memory
Application Number
10/379608
Publication Number
6859397 (B2)
Application Date
March 5, 2003
Publication Date
February 22, 2005
Inventor
Masaaki Higashitani
Cupertino
CA, US
Yan Li
Milpitas
CA, US
Jian Chen
San Jose
CA, US
Jeffrey W Lutze
San Jose
CA, US
Agent
Vierra Magen Marcus Harmon & DeNiro
Assignee
SanDisk Corporation
CA, US
IPC
G11C 016/04
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