06846516 is referenced by 81 patents and cites 505 patents.

Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

Title
Multiple precursor cyclical deposition system
Application Number
10/118605
Publication Number
6846516 (B2)
Application Date
April 8, 2002
Publication Date
January 25, 2005
Inventor
Ming Xi
Palo Alto
CA, US
Hongbin Fang
Mountain View
CA, US
Hui Zhang
Santa Clara
CA, US
Hyungsuk Alexander Yoon
Santa Clara
CA, US
Michael Xi Yang
Palo Alto
CA, US
Agent
Moser Patterson & Sheridan
Assignee
Applied Materials
CA, US
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