06838393 is referenced by 9 patents and cites 117 patents.

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Title
Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
Application Number
10/247404
Publication Number
6838393 (B2)
Application Date
September 19, 2002
Publication Date
January 4, 2005
Inventor
Li Qun Xia
Santa Clara
CA, US
Peter Wai Man Lee
San Jose
CA, US
Chi I Lang
Sunnyvale
CA, US
Dian Sugiarto
Sunnyvale
CA, US
Melissa M Tam
Fremont
CA, US
Kang Sub Yim
Mountain View
CA, US
Agent
Moser Patterson & Sheridan
Assignee
Applied Materials
CA, US
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