06838125 is referenced by 84 patents and cites 243 patents.

A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

Title
Method of film deposition using activated precursor gases
Application Number
10/193574
Publication Number
6838125 (B2)
Application Date
July 10, 2002
Publication Date
January 4, 2005
Inventor
Vincent W Ku
San Jose
CA, US
Ling Chen
Sunnyvale
CA, US
Hua Chung
San Jose
CA, US
Agent
Moser Patterson & Sheridan
Assignee
Applied Materials
CA, US
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