06808748 is referenced by 150 patents and cites 3 patents.

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

Title
Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
Application Number
10/350445
Publication Number
6808748 (B2)
Application Date
January 23, 2003
Publication Date
October 26, 2004
Inventor
Anchuan Wang
Fremont
CA, US
M Ziaul Karim
San Jose
CA, US
Bikram Kapoor
Santa Clara
CA, US
Agent
Townsend and Townsend & Crew
US
Assignee
Applied Materials
CA, US
IPC
C23C 16/40
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