06803631 is referenced by 91 patents.

A semiconductor structure includes a fin and a layer formed on the fin. The fin includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer is formed on the surfaces and includes a second crystalline material. The first crystalline material has a different lattice constant than the second crystalline material to induce tensile strain within the first layer.

Title
Strained channel finfet
Application Number
10/349042
Publication Number
6803631 (B2)
Application Date
January 23, 2003
Publication Date
October 12, 2004
Inventor
Bin Yu
Cupertino
CA, US
Haihong Wang
Fremont
CA, US
Zoran Krivokapic
Santa Clara
CA, US
Judy Xilin An
San Jose
CA, US
Srikanteswara Dakshina Murthy
Austin
TX, US
Agent
Harrity & Snyder
US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 27/01
View Original Source