06800910 is referenced by 176 patents.

A FinFET device employs strained silicon to enhance carrier mobility. In one method, a FinFET body is patterned from a layer of silicon germanium (SiGe) that overlies a dielectric layer. An epitaxial layer of silicon is then formed on the silicon germanium FinFET body. A strain is induced in the epitaxial silicon as a result of the different dimensionalities of intrinsic silicon and of the silicon germanium crystal lattice that serves as the template on which the epitaxial silicon is grown. Strained silicon has an increased carrier mobility compared to relaxed silicon, and as a result the epitaxial strained silicon provides increased carrier mobility in the FinFET. A higher driving current can therefore be realized in a FinFET employing a strained silicon channel layer.

Title
FinFET device incorporating strained silicon in the channel region
Application Number
10/335474
Publication Number
6800910 (B2)
Application Date
December 31, 2002
Publication Date
October 5, 2004
Inventor
Qi Xiang
San Jose
CA, US
Haihong Wang
Fremont
CA, US
Jung Suk Goo
Stanford
CA, US
Ming Ren Lin
Cupertino
CA, US
Agent
Foley & Lardner
US
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 27/105
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